Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures
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概要
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We report on the observation of a reduction in the depth of the S-shape in the temperature dependence of the photoluminescence peak energy with increasing excitation power density. Over the range of excitation power density where the depth of the S-shape is reduced, we also observe a reduction in the integrated photoluminescence intensity per unit excitation power, i.e., efficiency droop. Hence, the onset of efficiency droop occurs at the same carrier density as the onset of carrier delocalization. We correlate these experimental results with the predictions of a theoretical model of the effects of carrier localization due to local variations in the concentration of the randomly distributed In atoms on the optical properties of InGaN/GaN quantum wells. On the basis of this comparison of theory with experiment we attribute the reduction in the S-shape temperature dependence to the saturation of the available localized states. We propose that this saturation of the localized states is a contributory factor to efficiency droop whereby nonlocalized carriers recombine non-radiatively.
- 2013-08-25
著者
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Humphreys Colin
Department Of Materials Science And Metallurgy University Of Cambridge
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Kappers Menno
Department Of Materials Science And Metallurgy University Of Cambridge
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Oliver Rachel
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, U.K.
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Watson-Parris Duncan
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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Badcock Tom
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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Hammersley Simon
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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Dawson Phil
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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Godfrey Mike
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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McAleese Clifford
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, U.K.
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HUMPHREYS Colin
Department Materials Science and Metallurgy, University of Cambridge
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