Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells
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概要
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The photoluminescence (PL) transients in two highly efficient blue and cyan emitting InGaN/GaN multiple quantum well structures are studied as a function of recombination energy, temperature and excitation density. Based on the form and spectral dependence of the PL decay, the emission is attributed to the recombination of independently localised electron hole pairs throughout the investigated temperature range (10--300 K). To account for the variation of the decay time across the PL linewidth, the T = 10 K detection energies are purposely shifted according to the predicted change in InGaN bandgap with increasing temperature. In this way, we monitor the temperature dependence of the recombination lifetime in separate subsets of localised states. We suggest that the observed reduction in decay rate with increasing temperature above {\sim}80 K is caused by the thermally induced occupation of optically inactive ``dark'' states. The reduced temperature sensitivity of the PL decay time under high levels of excitation is consistent with the nature of the dark states being other, higher energy (more weakly) localised states within the distribution.
- 2013-08-25
著者
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Humphreys Colin
Department Of Materials Science And Metallurgy University Of Cambridge
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Kappers Menno
Department Of Materials Science And Metallurgy University Of Cambridge
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Oliver Rachel
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, U.K.
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Badcock Tom
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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Dawson Phil
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.
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Humphreys Colin
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, U.K.
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HUMPHREYS Colin
Department Materials Science and Metallurgy, University of Cambridge
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