15-P-01 Modification of Drain Current of MOS-FET by the Remanent Magnetization for New Memory

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概要

• 論文の詳細を見る
• 日本セラミックス協会の論文
• 2003-09-29

著者

• Shinozaki K

  Tokyo Inst. Technol. Tokyo Jpn

• WAKIYA Naoki

  Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science

• SHINOZAKI Kazuo

  Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science

• MIZUKAMI Satoshi

  Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science

• SHIMIZU Kan

  Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science

• MIZUTAN Nobuyasu

  Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science

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• 15-P-01 Modification of Drain Current of MOS-FET by the Remanent Magnetization for New Memory
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