15-O-02 Low Temperature Epitaxial Growth of Ceramic Thin Film Using Nano-Metwe-Thick Buffer Layers
スポンサーリンク
概要
- 論文の詳細を見る
- 日本セラミックス協会の論文
- 2003-09-29
著者
-
MIZUTANI Nobuyasu
Tokyo Tech.
-
Shinozaki K
Tokyo Inst. Technol. Tokyo Jpn
-
WAKIYA Naoki
Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science
-
SHINOZAKI Kazuo
Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science
関連論文
- Preparation of hydroxyapatite–ferrite composite particles by ultrasonic spray pyrolysis
- Si(001)基板上に作製したエピタキシャル成長ニッケル亜鉛フェライト薄膜の結晶構造と磁気特性におよぼすバッファー層の効果
- Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD
- Preparation of MgIn2O4Epitaxial Oxide Electrode with Spinel Structure and Heteroepitaxial Growth of BaTiO3–NiFe2O4Multiferroic Composite Thin Film
- 21-P-03 Direct Observation of Unequal Lattice Change of Ceramics Thin Films at High Temperature due to Film Thickness and Substrate
- 21-O-05 In-Situ TEM Analysis of Crystallization Process of Zirconia/Silicon Heterostructure
- 15-P-02 Effect of Source Supply Patterns on Microstructure and Crystallinity of PZT Thin Film using Pulsed MOCVD Method
- 15-P-01 Modification of Drain Current of MOS-FET by the Remanent Magnetization for New Memory
- 15-O-03 HRTEM Investigation of Interface Structure of Y-Ta Co-Doped Zirconia/Silicon Heterostructure
- 15-O-02 Low Temperature Epitaxial Growth of Ceramic Thin Film Using Nano-Metwe-Thick Buffer Layers