Electrooptic Properties of Epitaxial Lead Zirconate Titanate Films on Silicon Substrates
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概要
- 論文の詳細を見る
Electrooptic (EO) properties and propagation losses of the lead zirconate titanate (PZT) films grown on silicon (Si) substrates have been investigated. PZT films were prepared on Si substrates by chemical solution method. Refractive index changes and propagation losses of PZT films were evaluated by prism coupling method. A (100)-oriented 8.9-μm-thick epitaxial PZT film grown on a Si substrate with strontium ruthenium oxide/ceria/yttria-stabilized zirconia (SRO/CeO2/YSZ) epitaxial buffer layer was found to have large EO effect and very low propagation loss. Propagation of an infrared light with a wavelength of 1550 nm into a PZT film on Si substrate was successfully confirmed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-30
著者
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Wakiya Naoki
Shizuoka University
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SHINOZAKI Kazuo
Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science
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Wakiya Naoki
Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
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Kurihara Kazuaki
Devices and Materials Research Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kondo Masao
Devices and Materials Research Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sato Keisuke
Devices and Materials Research Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Ishii Masatoshi
Devices and Materials Research Laboratories, Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Shinozaki Kazuo
Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8588, Japan
関連論文
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- Preface
- Rotating Symmetrical Piezoelectric Microactuators for Magnetic Head Drives
- Electrooptic Properties of Lead Zirconate Titanate Films Prepared on Silicon Substrate
- Electrooptic Properties of Epitaxial Lead Zirconate Titanate Films on Silicon Substrates