Photoluminescence from Eu

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概要

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• We found that ZnO:Eu films sputter-deposited with H<inf>2</inf>O vapor gas produce intense photoluminescence from Eu³⁺ions through excitation of ZnO host crystals with a 325-nm laser light, whereas those deposited with O<inf>2</inf>gas do not. At optimum annealing temperatures of 300--500 °C, the primary luminescence from Eu³⁺ions appeared at 612 nm, which was much stronger than the near-band edge and defect emissions from ZnO. After annealing at higher temperatures, the 612-nm peak attenuated, and two emission lines at 612 and 620 nm, corresponding to two distinct chemical sites, had comparable intensities. These observations suggest that incorporating H⁺and/or OH^-species in ZnO crystals are prerequisite for emissions from Eu³⁺ions to occur. Characterization with infrared absorption spectroscopy and X-ray diffraction suggested that Eu³⁺ions substitute Zn²⁺sites when OH^-(H⁺) species are contained in ZnO crystals. The role of H⁺and/or OH^-species may be either charge compensation when substituting Zn²⁺sites with Eu³⁺ions or creation of trapping centers of excited energies that mediate efficient energy transfer from ZnO to Eu³⁺ions.

• 2013-07-25

著者

• Akazawa Housei

  Ntt Microsystem Integration Lab. Kanagawa Jpn

• Shinojima Hiroyuki

  NTT MI Laboratories, 27-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Akazawa Housei

  NTT Microsystem Integration Laboratories, Atsugi, Kanagawa 243-0198, Japan

• Shinojima Hiroyuki

  NTT Microsystem Integration Laboratories, Atsugi, Kanagawa 243-0198, Japan

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