Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs(Micro/Nano Fabrication,<Special Section>Microoptomechatronics)

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概要

• 論文の詳細を見る

• We determine the annealing dynamics of As_<Ga> antisite defects in As ion-implanted GaAs. An Arrhenius plot of the carrier decay rate or the defect density vs. the annealing temperature in the high temperature regime gives an energy E_<PA>, which is different from true activation energy. The annealing time dependence of E_<PA> obtained by the two diffusion models (self diffusion of As_<Ga> antisite defects and V_<Ga> vacancy assisted diffusion of As_<Ga> antisite defects) are compared with E_<PA>'s obtained from already published works. The results prove that the diffusion of As_<Ga> antisite defects is assisted by the V_<Ga> vacancy defects that exist in a high density.

• 社団法人電子情報通信学会の論文
• 2007-01-01

著者

• Yano Ryuzi

  Muroran Inst. Of Technology

• Shinojima Hiroyuki

  Ntt Mi Labs Ntt Corporation

• Shinojima Hiroyuki

  NTT MI Laboratories, 27-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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