Germanium Negative Islands Self-Organized in Homoepitaxy

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概要

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• When Ge films are grown on Ge(001) by GeH4 chemical vapor deposition under external excitation with vacuum ultraviolet photons, a large-scale morphological evolution occurs. We have identified that the characteristic microstructure at the coalescence stage is self-organized Ge pits with their bottom edges aligned along [110] and [$1\bar{1}0$] directions. In particular, intermittent growth at low temperatures produced inverted pyramidal pits surrounded by (113) sidewall facet planes, which were regarded as isolated negative islands engraved into the Ge epitaxial plateau. Fractal structures consisting of double negative islands have also been observed.

• Japan Society of Applied Physicsの論文
• 2008-07-25

著者

• Akazawa Housei

  Ntt Microsystem Integration Lab. Kanagawa Jpn

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