Argon Plasma Treatment of Transparent Conductive ZnO Films
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The irradiation of undoped ZnO films with electron-cyclotron-resonance argon plasma was found to improve its transparent conductive properties. While both carrier concentration and Hall mobility increased with the irradiation time for all ZnO films, reduction in resistivity was more remarkable for films having higher resistivities. Optical transmittance in the visible wavelength continuously improved and the interference fringe for thick films was red shifted. These observations can consistently be explained by assuming that collision-induced desorption or low-energy sputtering by argon ions removed oxygen atoms within ZnO crystallites, which produced electron carriers and enlarged crystallites.
- 2009-08-25
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