Relationship between Diffusion and Adhesion Properties of Ferroelectric Thin-Film Structure on Releasable Substrate
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概要
- 論文の詳細を見る
Pb(Zr<inf>0.52</inf>,Ti<inf>0.48</inf>)O<inf>3</inf>thin-films with various thicknesses were prepared on releasable Pt/SiO<inf>2</inf>/Si substrates. The adhesion force between Pt and SiO<inf>2</inf>was estimated, mainly in the viewpoint of the diffusion of Pb, in X-ray photoelectron spectroscopy (XPS) and tensile test for the clarification of the bonding properties of the nano-transfer method. The adhesion strength of Pt to SiO<inf>2</inf>has an inverse linear relationship with the thickness of Pt. On the other hand the adhesion strength of the samples, that were crystallized with different number of layers, were shown to be in the same region of 2--4 MPa as in case of PZT with over 250 nm in thickness. These results indicate that the origin of the bonding is the diffusion of Pb in the film and that the bonding strength is connected with the earlier stage of crystallization.
- 2013-06-25
著者
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Itoh Toshihiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Suga Tadatomo
Faculty of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Honda Fumiaki
Faculty of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Hosono Toshifumi
Faculty of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Fujino Masahisa
Faculty of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Ichiki Masaaki
Research Center for Ubiquitous MEMS and Micro Engineering, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
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