An Electrode Structure for Ferroelectric Thin Films and Its Application to the Nanotransfer Method
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概要
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One method of miniaturizing electric boards is to reduce the capacitor area on the board. We fabricated a thin film capacitor on a Si wafer, released the capacitor from the wafer, and transferred the released capacitor onto a board. BaTiO3 (BTO) was chosen as the dielectric material, and a capacitor was fabricated using metal-organic decomposition (MOD) onto a Si wafer with Ti and Pt as the bottom electrode. Measured electric properties included the dielectric constant, at about 640, as the I-V property, and hysteresis. When a BaTiO3 film was deposited onto the substrate, which had only a Pt electrode (no Ti used for bonding layer) to release from the substrate after deposition, the electrode broke because of internal stress. The stress was measured quantitatively and a new electrode structure was designed to overcome the problem. ECR etching proved adequate for making the electrode structure.
著者
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Itoh Toshihiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Iimura Keita
Dept. of Precision Engineering, School of Engineering, The University of Tokyo
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Ichiki Masaaki
Dept. of Precision Engineering, School of Engineering, The University of Tokyo
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Hosono Toshifumi
Dept. of Precision Engineering, School of Engineering, The University of Tokyo
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Suga Tadatomo
Dept. of Precision Engineering, School of Engineering, The University of Tokyo
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