Influence of Oxide Semiconductor Thickness on Thin-Film Transistor Characteristics
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概要
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We discuss here the influence of oxide semiconductor thickness on thin-film transistor (TFT) characteristics. We have determined this influence by measuring the transfer characteristics of amorphous InGaZnO (IGZO) TFTs having various IGZO thicknesses and using a simple method to calculate the depletion width in IGZO films. ON current was nearly constant with respect to IGZO thickness because it depended on a high electron density in an accumulation region sufficiently thinner than the IGZO film. The threshold voltage shifted negatively with increasing IGZO thickness, which indicates that a thicker IGZO film requires a higher negative gate voltage for it to be fully depleted. Calculation results suggest that threshold voltage variation due to IGZO thickness variation increases with increasing donor density and IGZO thickness.
- 2013-03-25
著者
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SATO Hiroto
NHK Science & Technical Research Laboratories
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FUJIKAKE Hideo
NHK Science & Technical Research Laboratories
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FUJISAKI Yoshihide
NHK Science & Technical Research Laboratories
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Yamamoto Toshihiro
Nhk Sci. & Technical Res. Lab. Tokyo Jpn
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Nakajima Yoshiki
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Takei Tatsuya
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Nakata Mitsuru
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Tsuji Hiroshi
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Fujisaki Yoshihide
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Yamamoto Toshihiro
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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