Analysis of the Influence of Sputtering Damage to Polymer Gate Insulators in Amorphous InGaZnO4 Thin-Film Transistors
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概要
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We have fabricated InGaZnO4 (IGZO) thin-film transistors (TFTs) with olefin-type polymer gate insulators formed at 130 °C and compared the transfer characteristics of top- and bottom-gate structures. We have investigated the mechanism behind the differences in the characteristics, focusing on the influence of IGZO sputtering damage to the polymer insulators. Bottom-gate IGZO-TFTs showed significant threshold voltage decreases attributable to positive fixed charges in the polymer gate insulators. These charges were generated by diffused metal ions during IGZO sputtering. Contrastingly, there was no sputtering damage to the polymer gate insulators in top-gate IGZO-TFTs, and these showed good switching performance.
- 2012-04-25
著者
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SATO Hiroto
NHK Science & Technical Research Laboratories
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FUJIKAKE Hideo
NHK Science & Technical Research Laboratories
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FUJISAKI Yoshihide
NHK Science & Technical Research Laboratories
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Yamamoto Toshihiro
Nhk Sci. & Technical Res. Lab. Tokyo Jpn
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Fujikake Hideo
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Nakajima Yoshiki
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Takei Tatsuya
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Nakata Mitsuru
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Tsuji Hiroshi
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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Fujisaki Yoshihide
NHK Science and Technology Research Laboratories, Setagaya, Tokyo 157-8510, Japan
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