Low-Voltage and Hysteresis-Free N-Type Organic Thin Film Transistor and Complementary Inverter with Bilayer Gate Insulator
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概要
- 論文の詳細を見る
In this paper, we report on a low-voltage-operation n-type organic thin film transistor (OTFT) and a complementary inverter circuit using a thiazolothiazole derivative as an organic semiconductor (OSC). To achieve the low voltage and stable operation of the n-type OTFT, a bilayer structure consisting of a thin low-$k$ polymer layer and a high-$k$ Ta2O5 layer was used and investigated as the gate insulator. Atomic force microscopy images of the OSC film on the hydrophobic polymer showed densely distributed small grains, and the corresponding OTFT exhibited hysteresis-free and excellent n-type performance, for example, an electron mobility of 0.23–0.35 cm2 V-1 s-1. In addition, the n-type OTFT with a thinner polymer layer exhibited a low operating voltage of less than 10 V while maintaining excellent characteristics. A complementary inverter based on the thiazolothiazole derivative and pentacene was also fabricated using the bilayer gate insulator. The switching operation of the inverter was achieved at a low voltage of 5–10 V.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
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Tokito Shizuo
Nhk Sci. And Technical Res. Laboratories
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Yamashita Yoshiro
Department Of Biology Faculty Of Science Kumamoto University
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FUJISAKI Yoshihide
NHK Science & Technical Research Laboratories
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Mamada Masashi
Department Of Electronic Chemistry Interdisciplinary Graduate School Of Science And Engineering Toky
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Yamashita Yoshiro
Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo institute of Technology, Nagatsuda, Midori-ku, Yokohama 226-8502, Japan
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Tokito Shizuo
NHK Science and Technical Research Laboratories, Kinuta, Setagaya, Tokyo 157-8510, Japan
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Mamada Masashi
Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo institute of Technology, Nagatsuda, Midori-ku, Yokohama 226-8502, Japan
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Kumaki Daisuke
NHK Science and Technical Research Laboratories, Kinuta, Setagaya, Tokyo 157-8510, Japan
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Fujisaki Yoshihide
NHK Science and Technical Research Laboratories, Kinuta, Setagaya, Tokyo 157-8510, Japan
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