Radio Frequency Micro Electro Mechanical Systems Inductor Configurations for Achieving Large Inductance Variations and High $Q$-factors
スポンサーリンク
概要
- 論文の詳細を見る
To determine a micro electro mechanical systems (MEMS) inductor configuration that gives large inductance variations and high $Q$-factors, air-suspended MEMS inductor configurations are studied: (a) an inductor with two angularly meandered lines, (b) a solenoid inductor with a pair of movable shields, (c) a planar spiral inductor with a patterned shield of different areas, and (d) a planar spiral inductor with a metallic frame of different sizes. The configuration of (a) is shown to give a large inductance variation of 115%. However, its $Q$-factor is only about 10, and difficulties in fabrication are also expected. The configuration of (b) could be a reasonable engineering solution. The inductance variation is 67%, and the maximum $Q$-factor is over 22. The solenoidal inductor configuration is thus considered suitable for realizing an RF MEMS variable inductor with large inductance variations and high $Q$-factors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-05-25
著者
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Amakawa Shuhei
Integrated Research Institute Tokyo Institute Of Technology
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Shuhei Amakawa
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Ishihara Noboru
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kazuya Masu
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Mizuochi Yutaka
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kazuya Masu
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yutaka Mizuochi
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Noboru Ishihara
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Ishihara Noboru
Integrated Research Institute, Tokyo Institute of Technology
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