Kazuya Masu | Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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概要
- Kazuya Masu の詳細を見る
- 同名の論文著者
- Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japanの論文著者
関連著者
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Amakawa Shuhei
Integrated Research Institute Tokyo Institute Of Technology
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Ishihara Noboru
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kazuya Masu
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Ishihara Noboru
Integrated Research Institute, Tokyo Institute of Technology
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Shuhei Amakawa
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Shuhei Amakawa
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Nakano Kazuo
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Mizuochi Yutaka
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Oshita Takao
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kazuya Masu
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Kazuo Nakano
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Yutaka Mizuochi
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Takao Oshita
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Noboru Ishihara
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Noboru Ishihara
Integrated Research Institute, Tokyo Institute of Technology, Yokohama 226-8503, Japan
著作論文
- Design of On-Chip High Speed Interconnect on Complementary Metal Oxide Semiconductor 180 nm Technology
- RF Signal Generator Based on Time-to-Analog Converter in 0.18 μm Complementary Metal Oxide Semiconductor
- Radio Frequency Micro Electro Mechanical Systems Inductor Configurations for Achieving Large Inductance Variations and High $Q$-factors