Organic Light-Emitting Field-Effect Transistor with Channel Waveguide Structure

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概要

• 論文の詳細を見る

• Organic field-effect transistors with channel waveguide structures were fabricated with thiophene/phenylene co-oligomer thin films. Top-contact source/drain electrodes of gold were deposited onto both side walls of the waveguide by the self-shadow masking vapor deposition technique leaving the co-oligomer channel of ${\sim}5$-μm-length intact. The device operated as a typical hole-accumulated unipolar transistor under negative gate biases. When alternating-current gate voltages were applied, the device showed light emission due to recombination of injected electrons with accumulated holes in the waveguide channel.

• 2010-01-25

著者

• Yanagi Hisao

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Yamao Takeshi

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

• Hotta Shu

  Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto

• Terasaki Kohei

  Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan

• Shigee Yuki

  Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan

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