Organic-Crystal Field-Effect Transistors Based on Terminal-Substituted Sexithiophenes
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概要
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We have improved a vapor-phase crystal growth method. The method is characterized by a low-rate molecular gas flow under a quasi-equilibrium condition. The obtained crystals can be applicable to basic and applied research on organic devices. Using the present method, we grew crystals of terminal-substituted \alpha-sexithiophene (6T) derivatives. These have phenyl substituent groups (P6T) or methyl substituent groups (M6T) at both molecular terminals. We made field-effect transistors using these crystals. Their maximum hole mobilities were more than 0.1 cm<sup>2</sup>\cdotV<sup>-1</sup>\cdots<sup>-1</sup>. Of these devices, the P6T device showed light emissions under applied alternating-current gate voltages. The emissions became rapidly intense with increasing gate voltage amplitude.
- 2013-05-25
著者
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Yamao Takeshi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Hotta Shu
Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto
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Inoue Atsushi
Deparmtnent Of Surgery Kuniyoshi Hospital
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Hotta Shu
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Fukaya Yoshihide
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Inoue Atsushi
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Fukunishi Yuya
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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