Improved Field-Effect Transistor Characteristics of an n-Type Semiconducting Thiophene/Phenylene Co-Oligomer
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概要
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We studied the organic field-effect transistor (OFET) characteristics of n-type thiophene/phenylene co-oligomers chosen as an organic semiconductor layer. The n-type characteristics were achieved by introducing trifluoromethyl groups on either molecular terminal. With crystals of this material, we fabricated OFET devices for which an MgAg alloy was used for drain and source electrodes and polymer layers were used as a gate insulator. In particular, the device fabricated on a poly(vinyl phenol) gate insulator layer shows a high electron mobility of 1.5 cm2 V-1 s-1. That on a poly(methyl methacrylate) layer indicates a low threshold voltage of 4.1 V. The polymer gate insulators and the low work-function metal play an important role in achieving a good device performance.
- 2010-01-25
著者
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Yamao Takeshi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Hotta Shu
Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto
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Shimizu Yasuhiro
Department Of Applied Physics University Of Tokyo:division Of Chemistry Kyoto University:(present Ad
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Shimizu Yasuhiro
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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Kuriki Hirofumi
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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Katagiri Toshifumi
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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SHIMIZU Yasuhiro
Department of Agricultural Chemistry, College of Agriculture, University of Osaka prefecture
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Yamao Takeshi
Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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