Effect of Oxygen Concentration on Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films Deposited on Indium Tin Oxide/Glass Substrates

スポンサーリンク

概要

• 論文の詳細を見る

• In this study, the perovskite Ba(Zr0.1Ti0.9)O3 (BZ1T9) ferroelectric thin films deposited on indium tin oxide (ITO)/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The optimal sputtering conditions of as-deposited BZ1T9 thin films are an rf power of 160 W, a chamber pressure of 10 mTorr, a substrate temperature of 580 °C, and an oxygen concentration of 40%. The effect of oxygen concentration on the physical and electrical characteristics of BZ1T9 thin films is determined. For different oxygen concentrations, the thickness and deposition rate are calculated by scanning electron microscopy (SEM). From polarization versus electrical field curves, the $2P_{\text{r}}$ value and coercive field of BZ1T9 thin films are determined to be 7 μC/cm2 and 250 kV/cm, respectively. In addition, the maximum dielectric constant, leakage current density, and transmittance within the ultraviolet–visible (UV–vis) spectrum are investigated.

• 2009-09-25

著者

• Yang Cheng-fu

  Department Of Chemical And Materials Engineering National University Of Kaohsiung

• Chen Kai-Huang

  Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, R.O.C.

• Lin Yi-Jun

  Department of Electro-Optical Engineering, Southern Taiwan University, Tainan 711, Taiwan, R.O.C.

• Chen Kai-Huang

  Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung 829, Taiwan, R.O.C.

• Chang Chia-Hsiung

  Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung 829, Taiwan, R.O.C.

関連論文

• Influence of Calcining Temperature on CuO-Modified (Ba_Sr_)(Ti_Zr_)O_3 Ceramics
• Microwave Dielectric Characteristics of Glass-Added (1 - x)Al_O_3-xTiO_2 Ceramics
• The Effect of the Crystalline Phase on the Sintering and Microwave Dielectric Properties of CuO-doped (Bi_Sm_)NbO_4 Ceramics
• Improved Optical Transmittance and Crystal Characteristics of ZnS:TbOF Thin Film on Bi_4Ti_3O_/Indium Tin Oxide/Glass Substrate by Using a SiO_2 Buffer Layer
• Electrical and Optical Characteristics of Bi_4Ti_3O_ Thin Film on Indium-Tin-Oxide/Glass
• Electrical and Optical Characteristics of Bi4Ti3O12 Thin Film on Indium-Tin-Oxide/Glass
• The Microwave Characteristics of Glass-BaTi_4O_9 Ceramics
• Sintering and Dielectric Properties of Ba_2Ti_9O_ Microwave Ceramics by Glass Addition
• Improved Optical Transmittance and Crystal Characteristics of ZnS:TbOF Thin Film on Bi4Ti3O12/Indium Tin Oxide/Glass Substrate by Using a SiO2 Buffer Layer
• Electrical and Optical Characteristics of Bi4Ti3O12 Thin Film on Indium–Tin-Oxide/Glass
• Melting CuO in BaTiO_3-based System
• The Influence of CuO–BaO Mixtures Addition on the Grain Growth of BaTiO3 Ceramics
• Improvement of the Sintering and Dielectric Characteristics of Surface Barrier Layer Capacitors by CuO Addition
• Improvement of Quality Value and Shift of τ_f Value of BiNbO_4 Ceramics with Addition of CuO-V_2O_5 Mixtures
• Dielectric and Piezoelectric Characteristics in Lead-Free Li[x](K.Na.)x(Nb.Ta.)O Piezoelectric Ceramics Prepared by Two-Step Calcination Method (Special Issue : Advanced Electromaterials)
• Effect of Oxygen Concentration on Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films Deposited on Indium Tin Oxide/Glass Substrates
• An Equivalent Cicuit for CuO Modified Surface Barrier Layer Capacitors
• Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films
• Nonvolatile transparent manganese oxide thin film resistance random access memory devices

もっと見る 閉じる

スポンサーリンク