Chen Kai-Huang | Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, R.O.C.
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概要
- Chen Kai-Huangの詳細を見る
- 同名の論文著者
- Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, R.O.C.の論文著者
関連著者
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Chen Kai-Huang
Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, R.O.C.
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Yang Cheng-fu
Department Of Chemical And Materials Engineering National University Of Kaohsiung
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Chen Ying-chung
Department Of Electrical Engineering National Sun Yat-sen University
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LIAO Chin-Hsiung
Department of Applied Physics, Chung-Cheng Institute of Technology
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Tsai Jen-hwan
Department Of Applied Physics Chung-cheng Institute Of Technology
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Chang Ting-chang
Department Of Electronics Engineering National Chiao Tung University And National Nano Device Labora
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Yang Cheng-Fu
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 800, Taiwan, R.O.C.
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Cheng Chien-Min
Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
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Chen Zhi-Sheng
Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, R.O.C.
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Lin Yi-Jun
Department of Electro-Optical Engineering, Southern Taiwan University, Tainan 711, Taiwan, R.O.C.
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Chen Kai-Huang
Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung 829, Taiwan, R.O.C.
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Chang Chia-Hsiung
Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung 829, Taiwan, R.O.C.
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Liang Shu-Hua
Department of Electronic Engineering, Southern Taiwan University, Tainan 700, Taiwan, R.O.C.
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Chen Kai-Huang
Department of Electronics Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung 829, Taiwan, R.O.C.
著作論文
- Dielectric and Piezoelectric Characteristics in Lead-Free Li[x](K.Na.)x(Nb.Ta.)O Piezoelectric Ceramics Prepared by Two-Step Calcination Method (Special Issue : Advanced Electromaterials)
- Effect of Oxygen Concentration on Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films Deposited on Indium Tin Oxide/Glass Substrates
- Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films
- Nonvolatile transparent manganese oxide thin film resistance random access memory devices