Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers
スポンサーリンク
概要
- 論文の詳細を見る
We demonstrate a novel process for fabrication of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer is utilized for both electrical and optical confinement. We present operating characteristics such as external differential quantum efficiency, T-zero and far field as a function of stripe width.
- 2009-04-25
著者
-
Roberts John
Department Of Electronic And Electrical Engineering University Of Sheffield
-
Groom Kristian
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
-
Stevens Benjamin
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
-
Childs David
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
-
Ang Yong
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
-
Alexander Ryan
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
-
Krysa Andrey
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
-
Helmy Amr
Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Rd., Toronto, ON, M5S 3G4, Canada
-
Hogg Richard
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
-
Helmy Amr
Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Rd., Toronto, ON, M5S 3G4, Canada
-
Roberts John
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
関連論文
- Design Rules and Characterisation of Electrically Pumped Vertical External Cavity Surface Emitting Lasers
- The Annihilation of Two Phase Interfaces in Superfluid ^3He : Simulated Brane Annihilation in the Laboratory(New Frontiers of Quantum Fluids and Solids)
- Excited State Bilayer Quantum Dot Lasers at 1.3 μm
- Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers
- Post Growth Fabrication of GaAs/AlGaAs Reflection Modulators via Impurity Free Disordering
- Compartment Syndrome After Bosworth Fracture-Dislocation of the Ankle : A Case Report
- Zero and Controllable Linewidth Enhancement Factor in p-Doped 1.3 μm Quantum Dot Lasers
- Effect of Deposition Temperature on the Opto-Electronic Properties of Molecular Beam Epitaxy Grown InAs Quantum Dot Devices for Broadband Applications
- Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser