Post Growth Fabrication of GaAs/AlGaAs Reflection Modulators via Impurity Free Disordering

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概要

• 論文の詳細を見る

• Disordering of GaAs/AlGaAs multiple quantum well asymmetric Fabry-Perot modulators (AFPM) was carried out using impurity free vacancy diffusion (IFVD), involving the deposition of a SiO_2 cap followed by rapid thermal annealing at 930℃. Blue shifts of up to 52 meV, while maintaining clearly resolved heavy and light hole excitons, were achieved. This enabled the production of both normally-off (contrast > 10 dB for - 5 V bias) and normally-on (reflection change > 30% for - 8V) AFPM's from the same wafer, thus displaying how IFVD can be used to tailor the optoelectronic properties after growth.

• 社団法人応用物理学会の論文
• 1991-06-01

著者

• Hill Geoff

  Department Of Electronic And Electrical Engineering University Of Sheffield

• Pate Malcom

  Department Of Electronic And Electrical Engineering University Of Sheffield

• Parry Gareth

  University Of London Interdisciplinary Research Centre For Semiconductors Materials Department Of El

• Roberts John

  Department Of Electronic And Electrical Engineering University Of Sheffield

• Ghisoni Marco

  University of London, Interdisciplinary Research Centre for Semiconductors Materials, Department of

• Ghisoni Marco

  University Of London Interdisciplinary Research Centre For Semiconductors Materials Department Of El

• Hill Geoff

  Department of Electronic and Electrical Engineering, University of Sheffield

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• Post Growth Fabrication of GaAs/AlGaAs Reflection Modulators via Impurity Free Disordering
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