Hogg Richard | Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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概要
- Hogg Richard A.の詳細を見る
- 同名の論文著者
- Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdomの論文著者
関連著者
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Childs David
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Groom Kristian
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Williams David
Department Of Botany Natural History Museum
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Alexander Ryan
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Stevens Ben
EPSRC National Centre for III--V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Majid Mohammed
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Majid Mohammed
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, U.K.
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Taylor Richard
Department Of Clinical Biochemistry John Radcliffe Hospital
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Roberts John
Department Of Electronic And Electrical Engineering University Of Sheffield
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Lin Li
Department Of Applied Mathematics Northwestern Polytechnical University
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LIU Hui
Department of Anesthesiology, West China Second University Hospital, Sichuan University
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Groom Kristian
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Groom Kristian
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hopkinson Mark
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Stevens Benjamin
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Ang Yong
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Krysa Andrey
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Helmy Amr
Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Rd., Toronto, ON, M5S 3G4, Canada
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Helmy Amr
Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Rd., Toronto, ON, M5S 3G4, Canada
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Khamas Salam
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Ikeda Naoki
NIMS Nanotechnology Innovation Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
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Sugimoto Yoshimasa
NIMS Nanotechnology Innovation Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
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Agarwal Harsh
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Stevens Ben
EPSRC National Centre for III-V materials, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Kennedy Kenneth
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Williams David
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Liu Hui
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Roberts John
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Hogg Richard
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, U.K.
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Hogg Richard
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Orchard Jonathan
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Clarke Edmund
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Shahid Hifsa
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Chen Siming
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Airey Robert
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Spencer Peter
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Murray Ray
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Childs David
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Childs David
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Childs David
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, U.K.
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Childs David
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hugues Maxime
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, U.K.
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Taylor Richard
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Alexander Ryan
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
著作論文
- Design Rules and Characterisation of Electrically Pumped Vertical External Cavity Surface Emitting Lasers
- Excited State Bilayer Quantum Dot Lasers at 1.3 μm
- Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers
- Zero and Controllable Linewidth Enhancement Factor in p-Doped 1.3 μm Quantum Dot Lasers
- Effect of Deposition Temperature on the Opto-Electronic Properties of Molecular Beam Epitaxy Grown InAs Quantum Dot Devices for Broadband Applications
- Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser