Zero and Controllable Linewidth Enhancement Factor in p-Doped 1.3 μm Quantum Dot Lasers
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概要
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We have studied the effects of $\delta$-p-doping on the operating characteristics of quantum dot (QD) lasers. It is well known that increasing $\delta$-p-doping in a laser core increases both the internal loss and threshold current. For QD lasers however, it has the beneficial effects of increasing differential efficiency and saturated ground state gain. A further consequence of increased $\delta$-p-doping is an ultra low linewidth enhancement factor (LEF) that can be tuned through zero and even made negative with increased doping at low injected current densities.
- 2007-04-30
著者
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LIU Hui
Department of Anesthesiology, West China Second University Hospital, Sichuan University
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Groom Kristian
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Groom Kristian
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Hopkinson Mark
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Childs David
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Alexander Ryan
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Agarwal Harsh
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Liu Hui
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Childs David
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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Alexander Ryan
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Fredrick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
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