Excited State Bilayer Quantum Dot Lasers at 1.3 μm
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概要
- 論文の詳細を見る
We report the realization of excited state bilayer quantum dot (QD) lasers in the 1.31 μm region. The higher saturated gain and lower scattering time of the excited states of the ensemble of QDs offers the opportunity for high modulation bandwidths. Gain measurements for these structures are discussed and compared to conventional QD laser structures. The extension of QD ground state operating wavelengths to 1.45 μm spanning the O- and E-band is also demonstrated.
- 2011-04-25
著者
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Childs David
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Kennedy Kenneth
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Clarke Edmund
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Majid Mohammed
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Shahid Hifsa
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Chen Siming
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Airey Robert
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Spencer Peter
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Murray Ray
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Majid Mohammed
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, U.K.
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