Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser
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概要
- 論文の詳細を見る
The waveguide design of a GaAs based, epitaxially regrown photonic crystal surface emitting laser is discussed so as to optimise the coupling of the photonic crystal and the mode overlap with the quantum wells. Design criteria include the positioning of the quantum well and the photonic crystal layers, and the effect of varying aluminium composition in the lower cladding layer. Room-temperature, pulsed laser oscillation is demonstrated.
- 2012-02-25
著者
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Taylor Richard
Department Of Clinical Biochemistry John Radcliffe Hospital
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Williams David
Department Of Botany Natural History Museum
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Groom Kristian
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Groom Kristian
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Childs David
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Stevens Ben
EPSRC National Centre for III--V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Khamas Salam
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Ikeda Naoki
NIMS Nanotechnology Innovation Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
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Sugimoto Yoshimasa
NIMS Nanotechnology Innovation Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
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Williams David
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Childs David
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Taylor Richard
Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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