Design Rules and Characterisation of Electrically Pumped Vertical External Cavity Surface Emitting Lasers
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概要
- 論文の詳細を見る
We present an experimental study of the effect of substrate doping on the operating characteristics of substrate emitting electrically pumped vertical external cavity surface emitting lasers. We demonstrate a reduction in substrate doping from $2\times 10^{18}$ to $4\times 10^{17}$ cm-3 leads to reduced optical loss and enhanced current--gain characteristics. Spatial carrier distributions, evidenced by near field profiling of devices without external feedback indicates essentially identical behavior for the two substrate dopings. Devices with diameter greater than 100 μm and current spreading layer thickness of 100 μm suffer from non-uniform carrier injection into the active region, below this diameter output power scales linearly with device diameter. We show CW powers of 130 mW from a 100 μm device with $4\times 10^{17}$ cm-3 substrate doping at 0 °C can be obtained.
- 2011-04-25
著者
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Williams David
Department Of Botany Natural History Museum
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Lin Li
Department Of Applied Mathematics Northwestern Polytechnical University
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Childs David
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Hogg Richard
Department of Electronic and Electrical Engineering, Centre for Nanoscience and Technology, The University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Stevens Ben
EPSRC National Centre for III--V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom
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Stevens Ben
EPSRC National Centre for III-V materials, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Hogg Richard
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Orchard Jonathan
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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Childs David
Department of Electronic and Electrical Engineering, The University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield, S3 7HQ, U.K.
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