Optical Properties of Quartz Implanted with V Ions
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概要
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V ions were implanted into quartz (single crystals of SiO2) at doses of $3 \times 10^{16}$–$1 \times 10^{17}$ ions/cm2 at 20 keV. The changes in the optical properties and microstructures were measured while annealing the sample in air at temperatures up to 800 °C. For the as-implanted sample, nanoparticles including V in the metallic state were confirmed to be formed in the implanted layer. The absorption spectrum showed a tendency of monotonic increase toward short wavelengths. When the samples were heated at the temperature range of 450–650 °C in air, a large and narrow absorption peak was observed at approximately 402–418 nm with the tendency to shift toward longer wavelengths as the temperature increased. After heating at 500 °C, the surface of the sample was yellow-green. The micromorphology of the surface was slightly roughened after heating with randomly dispersed microcrystals and concavities. Bleaching of this color occurred when the sample was heated at 550 °C for 30 h or at 700 to 800 °C for 1 h. The surface of the sample heated at 800 °C was found to be flat, and some nanoparticles were still observed in the surface layer. The chemical state of V in the implanted layer of the as-implanted sample was metallic, and after heating at 500 or 800 °C the core line of V 2p3/2 was shifted by about 2.7 eV from that of the metallic state. The binding energy of V 2p3/2 was 515 eV, which corresponds to that of vanadium oxides.
- 2008-06-25
著者
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Saito Yukinori
Department Of Electrical Engineering Yamanashi University
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Ijima Kaoru
Department Of Electronic Engineering University Of Yamanashi
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Fujita Takashi
Department Of Anesthesiology Suwa Red Cross Hospital
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Ho Angel
Department of Electrical Engineering, University of Yamanashi, Kofu 400-8511, Japan
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Mitsui Naoto
Department of Electrical Engineering, University of Yamanashi, Kofu 400-8511, Japan
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Mochiduki Kazuya
Department of Electrical Engineering, University of Yamanashi, Kofu 400-8511, Japan
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Fujita Takashi
Department of Electrical Engineering, Yamanashi Industrial Technology Junior College, Koshu, Yamanashi 404-0042, Japan
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Saito Yukinori
Department of Electrical Engineering, University of Yamanashi, Kofu 400-8511, Japan
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Ijima Kaoru
Department of Electrical Engineering, University of Yamanashi, Kofu 400-8511, Japan
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