Fabrication of NbN/Pb(In) Josephson Junctions with High Resistive Normal Layer Produced by Ar^+ Ion Bombardment
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概要
- 論文の詳細を見る
NbN/normal layer/Pb(In) Josephson junctions were fabricated by Ar^+ -ion bombardment. A thin normal layer of the order of 〜7 nm with a very high resistivity was produced in the near surface of an NbN film. This type S-N-S junction showed well-defined constant-voltage steps up to about 500 μV when microwave power was applied.
- 社団法人応用物理学会の論文
- 1986-07-20
著者
-
Saito Yukinori
Department Of Electrical Engineering Yamanashi University
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Suganomata Shinji
Department Of Electric Engineering Faculty Of Engineering Yamanashi University
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