Influence of Different Ammoniating Time on Tb-Catalyzed GaN Nanorods
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概要
- 論文の詳細を見る
A novel rare earth metal seed is employed as a catalyst for the growth of GaN nanorods. Large-scale GaN nanorods have been successfully synthesized through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates, ammoniating time is changed to study its influence on GaN nanorods. The samples are characterized with scanning electron microscopy, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectrum. The results demonstrate that the nanorods are single crystal hexagonal wurtzite GaN, whose diameter increases gradually with the rise of ammoniating time. The nanorods possess good optical properties. The growth mechanism of GaN nanorods is also discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-06-25
著者
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Wang Ying
Institute Of Animal Sciences Chinese Academy Of Agricultural Sciences (caas)
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Li Hong
Institute Of Immunological Science Hokkaido University
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Chen Jinhua
Institute of Semiconductors, Shandong Normal University, No. 88 East Culture Road, Ji'nan 250014, China
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Qin Lixia
Institute of Semiconductors, Shandong Normal University, No. 88 East Culture Road, Ji'nan 250014, China
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Li Hong
Institute of Semiconductors, Shandong Normal University, No. 88 East Culture Road, Ji'nan 250014, China
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Xiu Xianwu
Institute of Semiconductors, Shandong Normal University, No. 88 East Culture Road, Ji'nan 250014, China
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Yang Zhaozhu
Institute of Semiconductors, Shandong Normal University, No. 88 East Culture Road, Ji'nan 250014, China
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Xiu Xianwu
Institute of Semiconductors, Shandong Normal University, No. 88 East Culture Road, Ji'nan 250014, China
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Yang Zhaozhu
Institute of Semiconductors, Shandong Normal University, No. 88 East Culture Road, Ji'nan 250014, China
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