Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Self-organized microcones were grown on an n-Si(100) substrate by microwave plasma chemical vapor deposition. It was found that microcones having a cross section of an isosceles triangle were successfully grown on the Si substrate and that all the microcones had almost the same sizes. From the results of X-ray photoelectron spectroscopy (XPS), we concluded that the microcones consist of SiC covered with a thin carbon-based material. A model of the growth mechanism of the microcones was derived assuming that thermally assisted field emission and bombardment with ions accelerated by an electric field in the ion sheath of microwave plasma play an important role in the growth of the microcones. The field dependence of emission current from the microcones in vacuum agreed with the Fowler–Nordheim model, which indicates that these microcones can be used as field emission arrays.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Kobayashi Tadayuki
Department Of Communications And Systems The University Of Electro-communications
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Mizugaki Yoshinao
Department Of Electronic Engineering The University Of Electro-communications
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Moriya Masataka
Department Of Electronic Engineering The University Of Electro-communications
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Usami Kouichi
Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Ch
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Matsumoto Yuji
Department Of Biomaterials Science Graduate School Of Agricultural And Life Sciences The University
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Matsumoto Yuji
Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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