Coulomb Blockade Conditions for Detailed Model of Single-Electron Turnstile Device Including Finite Self-Capacitances of Island Electrodes
スポンサーリンク
概要
- 論文の詳細を見る
We propose a detailed model of a single-electron turnstile device in which each island electrode has a finite self-capacitance. The Coulomb blockade (CB) regions are obtained by calculating the free energy of the system, and are graphically presented in the gate-charge versus bias-voltage plane. We confirm the CB regions obtained to be octagonal, instead of the quadrilateral CB regions obtained in the conventional model.
- 2007-05-15
著者
-
Kobayashi Tadayuki
Department Of Communications And Systems The University Of Electro-communications
-
Mizugaki Yoshinao
Department Of Electronic Engineering The University Of Electro-communications
-
Moriya Masataka
Department Of Electronic Engineering The University Of Electro-communications
-
Usami Kouichi
Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Ch
-
Mizuta Asaki
Department of Electronic Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
-
Shimada Hiroshi
Course of Coherent Optical Science, and Department of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
関連論文
- Analytical Inductance Calculation of Superconducting Stripline by Use of Transformation into Perfect Conductor Model
- Single-Electron Turnstile Locked to Charge Solitons in a One-Dimensional Array of Small Junctions
- Single-Electron Signal Modulator Designed for a Flash Analog-to-Digital Converter : Instrumentation, Measurement, and Fabrication Technology
- Neuro-Base Josephson Flip-Flop
- Self organized Micro Cones on Si substrate by Microwave Plasma Chemical Vapor Deposition
- Fabrication of Variable-Thickness Bridge Using YBCO Thin Film
- Analysis of the Operation Modes of an RF-Field-Driven DC-SQUID(Special Issue on Superconductor Digital/Analog Circuit Technologies)
- Evaluation of Two Methods for Suppressing Ground Current in the Superconducting Integrated Circuits
- Mutual Inductance Coupled through Superconducting Thin Film in Niobium Josephson Integrated Circuits
- Influence of Sputtering Conditions on the Characteristics of Superconducting Y-Ba-Cu-O Films
- Voltage Doubler Cell for Rapid Single Flux Quantum Digital-to-Analog Converter
- Coulomb Blockade Conditions for Detailed Model of Single-Electron Turnstile Device Including Finite Self-Capacitances of Island Electrodes
- Average Voltage Measurements of Periodic Blocking Oscillation in Resistive Superconducting Quantum Interference Device Connected to Josephson Transmission Line
- Magnetic Isolation Enhanced by a Superconducting Loop in Josephson Integrated Circuits
- Current Correlation in Single-Electron Current Mirror Electromagnetically Dual to Josephson Voltage Mirror
- Zero-Crossing Shapiro Step in Asymmetric Two-Junction Superconducting Quantum Interference Device
- Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition
- Two-Dimensional Array of Nanotubes Grown in Porous Anodic Alumina by Ethanol Electrolysis
- Tunnel Magnetoresistance in Ferromagnet–Superconductor–Ferromagnet Single-Electron Transistors with Different Lead Spacings up to 50 μm
- Current Doublers Based on the Quantum Current-Mirror Effect