Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 μm Technology
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概要
- 論文の詳細を見る
Low voltages in two stress modes and at three temperatures were applied to two kinds of p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) to investigate the substrate current variations and hot-carrier (HC)-induced degradation. Contrary to conventional concepts, this investigation reveals that the worst conditions for pMOSFET HC reliability involve channel HC (CHC) mode and high temperatures. The severity of degradation of pMOSFETs has become comparable to their n-channel MOSFET (nMOSFET) counterparts. A probable damage mechanism is suggested to involve the generation of interface states owing to the integration of HCs and the negative-biased temperature effect (NBTI). A new empirical lifetime model is proposed in terms of applied voltages and temperatures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-03-25
著者
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Chen Shuang-Yuan
Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan
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Lin Jung-Chun
Special Technology Division, United Microelectronics Corporation, 3, Li-Hsin Rd. 2, Science-Based Industrial Park, Hsinchu 300, Taiwan
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Jhou Ze-Wei
Special Technology Division, United Microelectronics Corporation, 3, Li-Hsin Rd. 2, Science-Based Industrial Park, Hsinchu 300, Taiwan
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Chou Sam
Special Technology Division, United Microelectronics Corporation, 3, Li-Hsin Rd. 2, Science-Based Industrial Park, Hsinchu 300, Taiwan
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Ko Joe
Special Technology Division, United Microelectronics Corporation, 3, Li-Hsin Rd. 2, Science-Based Industrial Park, Hsinchu 300, Taiwan
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Haung Heng-Sheng
Institute of Mechatronics Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan
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Wu Ssu-Han
Special Technology Division, United Microelectronics Corporation, 3, Li-Hsin Rd. 2, Science-Based Industrial Park, Hsin-Chu 300, Taiwan
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Tu Chia-Hao
Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan
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Wang Mu-Chun
Department of Electronics Engineering, Minghsin University of Science and Technology, 1, Hsin-Hsin Rd., Hsin-Feng, Hsin-Chu County 304, Taiwan
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Kao Po-Wei
Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan
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Lin Memg-Hong
Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan
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Ko Joe
Special Technology Division, United Microelectronics Corporation, 3, Li-Hsin Rd. 2, Science-Based Industrial Park, Hsin-Chu 300, Taiwan
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Chou Sam
Special Technology Division, United Microelectronics Corporation, 3, Li-Hsin Rd. 2, Science-Based Industrial Park, Hsin-Chu 300, Taiwan
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Jhou Ze-Wei
Special Technology Division, United Microelectronics Corporation, 3, Li-Hsin Rd. 2, Science-Based Industrial Park, Hsin-Chu 300, Taiwan
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Haung Heng-Sheng
Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan
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Lin Jung-Chun
Special Tech. Development Group, ProMOS Technologies, 19, Li-Hsin Road, Science-Based Industrial Park, Hsin-Chu 30078, Taiwan
関連論文
- Interfacial and Electrical Characterization in Metal–Oxide–Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric
- Defect Generation and Severity Comparison of Negative Bias Temperature Stress-Induced Degradation on 90 nm p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Different Oxide Thicknesses
- The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress
- Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 μm Technology
- Mismatches after Hot-Carrier Injection in Advanced Complementary Metal–Oxide–Semiconductor Technology Particularly for Analog Applications
- Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 μm Technology