Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 μm Technology

概要

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In this study, n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) having 20 and 32 Å gate oxide thicknesses of 0.13 μm technology were used to investigate DC hot-carrier reliability at elevated temperatures up to 125 °C. The research also focused on the degradation of analog properties after hot-carrier injection. On the basis of the results of experiments, the hot-carrier degradation of $I_{\text{d,op}}$ (drain current defined on the basis of analog applications) is found to be the worst case among those of three types of drain current from room temperature to 125 °C. This result should provide valuable insight to analog circuit designers. As to the reverse temperature effect, the substrate current ($I_{\text{b}}$) commonly accepted as the parameter for monitoring the drain-avalanche-hot-carrier (DAHC) effect should be modified since the drain current ($I_{\text{d}}$) degradation and $I_{\text{b}}$ variations versus temperature have different trends. For the devices having a gate oxide thinner than 20 Å, we suggest that the worst condition in considering hot-carrier reliability should be placed at elevated temperatures.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-04-30