The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

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概要

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• Metal–oxide–semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions have been fabricated and their hot-carrier injection (HCI) reliability has also been investigated. The experimental results reveal that the HCI degradation of atomic layer deposition (ALD) HfSiON gate dielectrics is minimized at $\text{Hf} : \text{Si} = 1 : 3$. Moreover, the experimental results also show that the increment of oxide trapped charges ($\Delta N_{\text{ot}}$) depends on Hf content and is about one order of magnitude larger than that of interface traps ($\Delta N_{\text{it}}$) after channel-hot-carrier (CHC) stress. Finally, some important interfacial parameters, including $\Delta N_{\text{it}}$, $\Delta D_{\text{it}}$, and $\Delta N_{\text{ot}}$, have also been characterized through the charge pumping (CP) technique.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Cheng Li-Wei

  Central R&D Division, United Microelectronics Corporation (UMC), No. 3, Li-Hsin Rd. II, HsinChu City 300, Taiwan

• Cheng Li-Wei

  Central R&D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan

• Chen Shuang-Yuan

  Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan

• Chen Hung-Wen

  Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan

• Liu Chuan-Hsi

  Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan

• Chen Hung-Wen

  Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan

• Chen Shuang-Yuan

  Institute of Mechatronic Engineering, National Taipei University of Technology, 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan

関連論文

• Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon n-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers
• Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-$\kappa$ CeZrO4 Ternary Oxide as Gate Dielectric
• Extra Bonus on Transistor Optimization with Stress Enhanced Notched-Gate Technology for Sub-90 nm Complementary Metal Oxide Semiconductor Field Effect Transistor
• Interfacial and Electrical Characterization in Metal–Oxide–Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric
• Defect Generation and Severity Comparison of Negative Bias Temperature Stress-Induced Degradation on 90 nm p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Different Oxide Thicknesses
• The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress
• Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 μm Technology
• Mismatches after Hot-Carrier Injection in Advanced Complementary Metal–Oxide–Semiconductor Technology Particularly for Analog Applications
• Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 μm Technology

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