Electrical Properties of Thick Epitaxial Silicon Films Deposited at High Rates and Low Temperatures by Mesoplasma Chemical Vapor Deposition

スポンサーリンク

概要

• 論文の詳細を見る

• The deposition of homoepitaxial silicon thick films at a rate of ${\sim}33$ nm/s and a substrate temperature of 360 °C was achieved by mesoplasma chemical vapor deposition. The deposition rate increased linearly with silane partial pressure with no significant effect from the substrate temperature. An average Hall mobility of ${\sim}270$ cm2 V-1 s-1 was obtained irrespective of both the deposition rate and the substrate temperature. Epitaxy at such a high rate and low temperature under a precursor-transport-limited condition was thought to be due to the high transport rate of thermally activated atoms/clusters, together with high atomic hydrogen flux, which are unique characteristics of the mesoplasma condition.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-08-15

著者

• Kambara Makoto

  Department Of Metallurgy The University Of Tokyo

• Yoshida Toyonobu

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Sawayanagi Munetaka

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Yoshida Toyonobu

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Diaz Jose

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Kambara Makoto

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

関連論文

• Preparation of Cubic Boron Nitride Films by RF Sputtering
• 95 K NdBCO Single Crystal Grown in Air by Controlling Liquid Compositiorn
• Transmission Electron Microscopic Studies of LiNb_Ta_O_3 Films Deposited on Sapphire Substrates by Thermal Plasma Spray CVD (Microstructure of LiNb_Ta_O_3 Films Deposited by Thermal Plasma Spray CVD)
• Growth of Cubic Boron Nitride Films by Low-Pressure Inductively Coupled Plasma Enhanced Chemical Vapor Deposition ( Plasma Processing)
• Electrical Properties of Thick Epitaxial Silicon Films Deposited at High Rates and Low Temperatures by Mesoplasma Chemical Vapor Deposition
• Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy
• Development of Porous YSZ Coatings with Modified Thermal and Optical Properties by Plasma Spray Physical Vapor Deposition
• Edge Vascular Response After Polymer-Free vs. Polymer-Based Paclitaxel-Eluting Stent Implantation:– Serial Intravascular Ultrasound Study From the Late Incomplete Stent Apposition Evaluation (LISA) Trial –

スポンサーリンク