Preparation of Cubic Boron Nitride Films by RF Sputtering

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概要

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• Cubic boron nitride (c-BN) films have been prepared by sputtering of a hexagonal BN sintered target under a negative self-bias voltage applied to Si substrates and a sputtering gas composition of Ar/N_2. A c-BN phase was found to be contained only in the films prepared in pure Ar discharge with a negative self-bias above a threshold value. Moreover, the ratio of c-BN to hexagonal boron nitride increased with increasing negative self-bias voltage. The films consisting mainly of the c-BN phase were easily peeled from Si substrates on exposure to air because of their strong compressive stress.

• 1990-07-20

著者

• YOSHIDA Toyonobu

  Department of Materials Engineering, School of Engineering, The University of Tokyo

• Yoshida Toyonobu

  Department Of Metallurgy And Materials Science Faculty Of Engineering University Of Tokyo

• Yoshida Toyonobu

  Department Of Metallurgy And Materials Science Faculty Of Engineering The University Of Tokyo

• Yoshida Toyonobu

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Mieno M

  National Inst. Res. In Inorganic Materials Ibaraki Jpn

• MIENO Masahiro

  Department of Metallurgy and Materials Science, Faculty of Engineering, University of Tokyo

関連論文

• Preparation of Cubic Boron Nitride Films by RF Sputtering
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• Electrical Properties of Thick Epitaxial Silicon Films Deposited at High Rates and Low Temperatures by Mesoplasma Chemical Vapor Deposition
• Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy
• Development of Porous YSZ Coatings with Modified Thermal and Optical Properties by Plasma Spray Physical Vapor Deposition

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