Low Dielectric Constant Film Containing No Oxygen for Barrier-Free Cu Interconnects

スポンサーリンク

概要

• 論文の詳細を見る

• A novel low dielectric constant (low-$k$) film containing no oxygen was evaluated for barrier-free Cu interconnects. The film shows a time dependence dielectric breakdown (TDDB) lifetime which is more than 10 years under operating conditions in 65-nm-technology node. The film has a $k$ of 2.9, a hardness greater than 0.87 GPa, and a modulus greater than 11.7 GPa. The strength of adhesion of the low-$k$ film to Cu is equivalent to that of a conventional organic film to Ta.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-03-15

著者

• Aoi Nobuo

  Association Of Super-advanced Electronics Technologies (aset)

• FUKUDA Takuya

  Association of Super-Advanced Electronics Technologies (ASET)

• Funaki Yoshinori

  Corporate R&D Center, Daicel Chemical Industries, Ltd., 1239 Shinzaike, Aboshi-ku, Himeji, Hyogo 671-1283, Japan

• Fukuda Takuya

  Association of Super-Advanced Electronics Technologies (ASET), 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan

関連論文

• Analysis of Leakage Current of Low-k Materials for Use as Interlayer Dielectric
• Force Driving Cu Diffusion into Interlayer Dielectrics : Semiconductors
• Novel Method of Estimating Dielectric Constant for Low-k Materials: Semiconductors
• Analysis of Leakage Current of Low-k Materials for Use as Interlayer Dielectric
• Low Dielectric Constant Film Containing No Oxygen for Barrier-Free Cu Interconnects
• A Novel Method of Removing Impurities from Multilevel Interconnect Materials

スポンサーリンク