A Novel Method of Removing Impurities from Multilevel Interconnect Materials

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概要

• 論文の詳細を見る

• A novel method of removing impurities from dielectric films has been developed. The removal of water and charges is accomplished by humidification and wet pretreatment followed by charge extraction with CO2 supercritical fluid (SCF). Films treated in this manner exhibit intrinsic properties, which are usually masked by moisture and impurities.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-03-15

著者

• FUKUDA Takuya

  Association of Super-Advanced Electronics Technologies (ASET)

• YANAZAWA Hiroshi

  Association of Super-Advanced Electronics Technologies (ASET)

• Yanazawa Hiroshi

  Association of Super-Advanced Electronics Technologies (ASET), 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa 244-0817, Japan

関連論文

• Analysis of Leakage Current of Low-k Materials for Use as Interlayer Dielectric
• Force Driving Cu Diffusion into Interlayer Dielectrics : Semiconductors
• Novel Method of Estimating Dielectric Constant for Low-k Materials: Semiconductors
• Analysis of Leakage Current of Low-k Materials for Use as Interlayer Dielectric
• Low Dielectric Constant Film Containing No Oxygen for Barrier-Free Cu Interconnects
• A Novel Method of Removing Impurities from Multilevel Interconnect Materials

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