Analysis of Leakage Current of Low-k Materials for Use as Interlayer Dielectric

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概要

• 論文の詳細を見る

• The relationship between mobile charge and leakage current was investigated. Both leakage paths and change of charge distribution were taken into account. The difference in flat-band voltage between the applied high and low frequencies reflects the number of mobile charges. Films with a large difference were found to exhibit a large leakage current at high temperatures. Thus, we can conclude that the leakage current arises mainly from the mobile charges in a film.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-01-15

著者

• FUKUDA Takuya

  Association of Super-Advanced Electronics Technologies (ASET)

• NISHINO Hirotaka

  Association of Super-Advanced Electronics Technologies (ASET)

• YANAZAWA Hiroshi

  Association of Super-Advanced Electronics Technologies (ASET)

• Nishino Hirotaka

  Association of Super-Advanced Electronics Technologies (ASET), 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa 244-0817, Japan

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