Investigation of Bowing Reduction in SiO2 Etching Taking into Account Radical Sticking in a Hole
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概要
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The bowing mechanism in high-aspect-ratio contact hole (HARC) etching was investigated by taking into account reactive sticking on the sidewall of the hole. Sticking coefficients of radicals on the sidewall have been estimated by comparing the observed deposition profile with the calculated one. It was found that the coefficients of C rich radicals and CFx radicals were 0.5 and 0.004, respectively, and that F radical reaction probability to the fluorocarbon polymer is 0.07. These coefficient values were deduced that the excessive flux of O and F onto the sidewall of a hole causes bowing during HARC etching. It was also indicated that the bowing can be suppressed by reducing of the flux of oxygen. These findings were confirmed by the results of experiments using an ultra-high frequency-electron cyclotron resonance (UHF-ECR) plasma.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
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IZAWA Masaru
Central Research Laboratory, Hitachi, Ltd.
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Negishi Nobuyuki
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan
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Momonoi Yoshinori
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan
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Izawa Masaru
Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan
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