Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements

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概要

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• We studied real-time estimation and automatic control of etch-rate distribution in order to develop next-generation oxide etching techniques that will have improved reliability and reproducibility when used in mass production processes. We specifically investigated the relationship between plasma emission intensity (PEI) distribution detected by silicon photodiodes and oxide etch-rate distribution. We found that there was a strong correlation (correlation coefficient = 0.988) between the uniformity of oxide etch-rate distribution and relative PEI distribution. We also found that relative changes in oxide etch-rate uniformity of $\pm 1$% can be detected in real time by measuring PEI distribution. We then demonstrated that self-adjustments of oxide etch-rate distribution are possible by using feedback based on the monitoring PEI distribution to control magnetic field conditions. Moreover, we demonstrated that monitoring PEI distribution can be used to observe fast phenomena that occur in the order of milliseconds during the plasma transition process. These phenomena are related to charging damage, such as plasma ignition and disappearance.

• 2008-08-25

著者

• IZAWA Masaru

  Central Research Laboratory, Hitachi, Ltd.

• Maeda Kenji

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Izawa Masaru

  Central Research Laboratory, Hitachi Ltd., 1-280 Higashikoigakubo, Kokubunji, Tokyo 185-8601, Japan

関連論文

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• Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements
• Effects of Mask and Necking Deformation on Bowing and Twisting in High-Aspect-Ratio Contact Hole Etching
• Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing (Special Issue : Dry Process)
• Investigation of Bowing Reduction in SiO2 Etching Taking into Account Radical Sticking in a Hole

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