Contact Pressure Dependence of Carrier Mobility in Cleaved Tetracene Single-Crystal Field-Effect Transistors
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概要
- 論文の詳細を見る
Tetracene single-crystal field-effect transistors (FETs) were fabricated using fresh cleaved tetracene single crystals. In order to obtain a fine contact between the tetracene crystals and the substrate, a stress was applied using an Instron-type machine. Carrier mobility was measured as a function of applied stress and it was observed that 0.5 cm2/(V s) was the highest mobility under the optimum applied stress.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-15
著者
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Kojima Kenichi
Graduate School Of Integrated Science Yokohama City University
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Tachibana Masaru
Graduate School Of Liberal Arts And Science Yokohama City University
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Nisikawa Tomoyuki
Graduate School of Liberal Arts and Science, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
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Unno Akira
Graduate School of Liberal Arts and Science, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
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Kojima Kenichi
Graduate School of Liberal Arts and Science, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
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Nishikawa Tomoyuki
Graduate School of Liberal Arts and Science, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
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Moriguchi Naoki
Graduate School of Liberal Arts and Science, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
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Anezaki Takashi
Graduate School of Liberal Arts and Science, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
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Tachibana Masaru
Graduate School of Integrated Science, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan
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Kojima Kenichi
Graduate School of Integrated Arts and Sciences, Hiroshima University, Higashihiroshima, Hiroshima 739-8521, Japan
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