Fabrication and Electrical Properties of (Bi,La)4Ti3O12 Thin Films Deposited with Electric-Field-Assisted Annealing

概要

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Bi3.35La0.75Ti3O12 (BLT) thin films were deposited with electric-field-assisted annealing (EFA-A) by chemical solution deposition (CSD) to increase the degree of the preferred orientation. The X-ray diffraction intensities of (200)/(020) planes in the BLT films were increased by EFA-A, compared with those in the BLT film annealed without EFA-A. The remanent polarization ($P_{\text{r}}$) for the film deposited with EFA-A exhibited a higher value than that for the film deposited without EFA-A. The $P_{\text{r}}$ value for the BLT film deposited without EFA-A was 21 μC/cm2. On the other hand, the $P_{\text{r}}$ value for the BLT film deposited with EFA-A was as high as 28 μC/cm2. The enhancement of the polarization in the film deposited with EFA-A was ascribed to the increase in the number of grains in the film oriented in the direction of the polarized axis. In addition, the pyroelectric and piezoelectric properties of the resulting films were measured to investigate the effect of the EFA-A. The pyroelectric coefficient and the effective $d_{33}$ value of the films were also improved by EFA-A. The tendencies of the pyroelectric and piezoelectric properties of the BLT films were in good agreement with the $P$–$E$ hysteresis loops of the films.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-09-15