Influence of Electric-Field-Assisted Annealing on Orientation of Pb(Zr0.5,Ti0.5)O3 Thin Films
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概要
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Pb(Zr0.5,Ti0.5)O3 (PZT) thin films were deposited through chemical solution deposition (CSD) on Pt/Ti/SiO2/Si substrates by electric-field-assisted annealing (EFA-A). XRD relative intensities for the (001)&(100) planes of the PZT perovskite phase in films deposited by EFA-A increased with increasing applied electric field. However, the electrical properties of the resultant PZT thin films deposited by EFA-A could not be measured because of the relatively large cracks formed during EFA-A. Therefore, two additional processes were introduced to obtain (001)-oriented PZT films with good electrical properties. One of the processes was the deposition of PZT film with a PbO seeding layer by EFA-A and the other was the infiltration process after the deposition of films by EFA-A to heal the cracks formed by EFA-A. The results indicated that cracks caused by EFA-A could be infiltrated by post-annealing to show relatively good remanent polarization ($P_{\text{r}}$) and a large effective piezoelectric constant of $d_{33}$ compared with those of the films deposited without EFA-A. The measured remanent polarization for the films with and without EFA-A were 12.5 μC/cm2 and 10.9 μC/cm2, respectively. In addition, the PZT film deposited with a PbO seeding layer by EFA-A also exhibited a larger effective $d_{33}$ of 230 pC/N in comparison with the film deposited without EFA-A.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
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Suzuki Hisao
Department Of Electronic-mechanical Engineering Faculty Of Engineering Nagoya University
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Suzuki Shigeru
Graduate School Of Engineering Yokohama National University
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Nakayama Hiroshi
Graduate School Of Engineering Osaka City University
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Miyahara Shouichi
Shizuoka Industrial Research Institute of Shizuoka Prefecture, 2078 Makigaya, Shizuoka 421-1298, Japan
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Suzuki Hisao
Departmennt of Materials Science, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
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Nakayama Hiroshi
Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
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