Electrical Erasing of Holographic Grating in Amorphous Chalcogenide Thin Films

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We investigated the electrical erasing of information recorded by a holographic method in an amorphous As40Ge10Se15S35 chalcogenide thin film. Even though the amplitude of photoinduced birefringence ($\Delta n$) strongly depends on applied DC voltage ($V_{\text{DC}}$), the kinetics exhibits a tendency. For $V_{\text{DC}}=0--3$ V, $\Delta n$ increases with increasing induction time and eventually saturates to its maximum ($\Delta n_{\text{max}}$) even though its saturation time and amplitude are not the same at different $V_{\text{DC}}$’s. For $V_{\text{DC}}>4$, $\Delta n$ increases rapidly at the start of the induction process (within several seconds), reaches $\Delta n_{\text{max}}$ and then decreases very slowly. In addition, phase gratings in amorphous As40Ge10Se15S35 films were formed by the holographic method and diffraction efficiency ($\eta$) was monitored in real time. Immediately after reaches its maximum ($\eta_{\text{max}}$), a short pulse was applied to the sample which cause a marked decrease in diffraction efficiency ($\eta=0.25\%\rightarrow\eta\ll 10^{-3}$).
2005-07-15