Optical properties of copper in chalcogenide materials used in programmable metallization cell devices (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

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• Programmable Metallization Cell(PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. In this paper, we investigate the nature of thin films formed by the photo-doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates due to the reaction of Cu with free atoms from the chalcogenide materials.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Chung Hong‐bay

  Kwangwoon Univ. Kor

• CHUNG Hong-Bay

  Department of Electronic Materials Eng., Kwangwoon University

• Choi Hyuk

  Department Of Oriental Pharmacy College Of Pharmacy Wonkwang University

• Nam Ki-hyeon

  Dept. Of Electronic Materials Engineering Kwangwoon University

• NAM Ki-Hyun

  Department of Electronic Materials Engineering, Kwangwoon University

• JU Long-Yun

  Department of Electronic Materials Engineering, Kwangwoon University

• Choi Hyuk

  Department Of Electronic Materials Engineering Kwangwoon University

• Ju Long-yun

  Department Of Electronic Materials Engineering Kwangwoon University

• Chung Hong-bay

  Department Of Electronic Materials Eng. Kwangwoon University

• Ham Ki-Hyun

  department of Electronic Materials Engineering, Kwangwoon University

関連論文

• Electrical Erasing of Holographic Grating in Amorphous Chalcogenide Thin Films
• Amorphous Se_Ge_ Resist Profile Simulation of Focused-Ion-Beam Lithography
• The Anti-inflammatory and Anti-nociceptive Effects of Ethyl Acetate Fraction of Cynanchi Paniculati Radix(Pharmacognosy)
• Optical Properties of Copper in Chalcogenide Materials Used in Programmable Metallization Cell Devices
• Optical properties of copper in chalcogenide materials used in programmable metallization cell devices (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Developing recordable medium with amorphous chalcogenide material for HDDS (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Optical properties of copper in chalcogenide materials used in programmable metallization cell devices (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Developing recordable medium with amorphous chalcogenide material for HDDS (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Polarization Dependence of Holographic Grating in Chalcogenide Film
• Sub-0.1 μm Patterning Characteristics of Inorganic Thin Films by Focused-Ion-Beam Lithography
• Amorphous-Si Transmission Gratings Prepared by Ga^+-Focused-Ion-Beam Milling and Their Polarization Characteristics : Instrumentation, Measurement, and Fabrication Technology
• Polarization Dependence of Photoinduced Birefringence in Chalcogenide Thin Film
• Thermally and Optically Induced Nanocrystallites in Amorphous ZnSe Thin Films
• Electrical Switching Studies of Amorphous Ge1Se1Te2 Thin Film for a High-Performance Nonvolatile Phase-Change Memory
• Electrical Erasing of Holographic Grating in Amorphous Chalcogenide Thin Films
• Electrical Characteristics of Ge25Se75 Thin Films by Ag Ion Doping Methods for Resistance Random Access Memory Applications
• Polarization Dependence of Holographic Grating in Chalcogenide Film
• Polarization Dependence of Photoinduced Birefringence in Chalcogenide Thin Film
• Thermally and Optically Induced Nanocrystallites in Amorphous ZnSe Thin Films

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