Optical properties of copper in chalcogenide materials used in programmable metallization cell devices (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

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Programmable Metallization Cell(PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. In this paper, we investigate the nature of thin films formed by the photo-doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates due to the reaction of Cu with free atoms from the chalcogenide materials.
社団法人電子情報通信学会の論文
2007-06-18