Molecular Dynamics Simulation at the Early Stage of Thin-Film Deposition: Al or Co on Co(111)

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概要

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• The growth mechanisms at the early stage of thin-film deposition were quantitatively investigated using the molecular dynamics method, focusing on the cases of Al and Co on an fcc-Co(111) system. In the case of Al on Co(111), Al adatoms were grown basically in the layer-by-layer growth mode. Moreover, this growth behavior became more obvious with increasing substrate temperature from 80 K to 300 K. In the case of Co on Co(111), Co adatoms apparently favored the island growth mode at a low incident energy. By increasing the energy, however, the tendency towards the layer-by-layer growth mode highly increased. These could be explained by the difference in surface diffusion barrier between the two cases.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• CHUNG Yong-Chae

  CPRC, Department of Ceramic Engineering, Hanyang University

• KIM Sang-Pil

  CPRC, Department of Ceramic Engineering, Hanyang University

• LEE Kwang-Ryeol

  Future Technology Research Division, Korea Institute of Science and Technology

• Lee Seung-cheol

  Future Fusion Technology Laboratory Korea Institute Of Science & Technology

• Chung Yong-Chae

  CPRC, Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Korea

• Kim Sang-Pil

  CPRC, Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Korea

• Lee Seung-Cheol

  Future Technology Research Division, Korea Institute of Science and Technology, Seoul 130-650, Korea

• Lee Kwang-Ryeol

  Future Technology Research Division, Korea Institute of Science and Technology, Seoul 130-650, Korea

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